Semiconductor device

Details Semiconductor device Semiconductor device

1989-01-12

1990-10-02

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 16, 357 17, 357 56, 372 45, H01S 319

Patent

active

049611984

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a plurality of mesa stripes whose widths are different from each other. Quantum well layers are formed on the mesa stripes respectively and have different band gap energies. The quantum well layers include ultra-thin epitaxial layers respectively. Semiconductor elements are formed on the mesa stripes respectively and include the quantum well layers respectively. Thicknesses of the ultra-thin layers are preferably equal to or less than 500 angstroms.

REFERENCES:
patent: 4815087 (1989-03-01), Hayashi
patent: 4815090 (1989-03-01), Usami et al.
patent: 4820655 (1989-04-01), Noda et al.
patent: 4829535 (1989-05-01), Utaka

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