Semiconductor device

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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Details

C365S185170, C365S063000

Reexamination Certificate

active

07983083

ABSTRACT:
According to an aspect of the present invention, there is provided a semiconductor device including: first and second blocks that each includes a word line group of first to N-th word lines, the word lines extending in a given direction, the word lines having a first width, the first and second blocks being adjacent to and in parallel with each other in a crossing direction so that an inter-block area is interposed therebetween and so that the word line groups are symmetrical with respect to the inter-block area; and a first wirings that are formed in a first wiring layer positioned above the word lines to have a second width wider than the first width and that connect a k-th word line of the first block and a k-th word line of the second block.

REFERENCES:
patent: 2007/0138535 (2007-06-01), Higashitani
patent: 6-61458 (1994-03-01), None
patent: 9-17974 (1997-01-01), None
patent: 9-45087 (1997-02-01), None
patent: 2000-183307 (2000-06-01), None
patent: 2008-47904 (2008-02-01), None

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