Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S206000, C257S499000, C257S397000

Reexamination Certificate

active

07868359

ABSTRACT:
In a semiconductor device including multiple unit cells arranged in an array, transistors are affected by a stress from an STI at different degrees depending on the position in the array. As a result, a variation occurs in transistor characteristic. In a semiconductor device according to the present invention, each of predetermined transistors in outermost unit blocks in the array has a transistor size according to the stress from the STI.

REFERENCES:
patent: 6320223 (2001-11-01), Hueting et al.
patent: 6531357 (2003-03-01), Takeuchi et al.
patent: 6891761 (2005-05-01), Kumagai et al.
patent: 6924560 (2005-08-01), Wang et al.
patent: 7032194 (2006-04-01), Hsueh et al.
patent: 7093215 (2006-08-01), Sahara et al.
patent: 7109568 (2006-09-01), Kumagai et al.
patent: 7205617 (2007-04-01), Ohta et al.
patent: 2006/0145266 (2006-07-01), Zushi et al.
patent: 2007/0007617 (2007-01-01), Nakamura et al.
patent: 2007/0164317 (2007-07-01), Nakanishi
patent: 2002-76148 (2002-03-01), None
patent: 2005-101453 (2005-04-01), None
patent: 2006-190727 (2006-07-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2711628

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.