Semiconductor device

Details Semiconductor device Semiconductor device

1993-06-11

1995-02-14

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257472, 257607, 257616, 257744, H01L 2948, H01L 2348, H01L 29161, H01L 29167

Patent

active

053897994

ABSTRACT:
Disclosed is a semiconductor device such as a light emitting diode, a MOS transistor, a Schottky diode, and CCD. The semiconductor device comprises a SiC layer of a first conductivity type and another SiC layer of a second conductivity type. At least one of the SiC layers of the first and second conductivity types is doped with at least one element selected from the group consisting of Cr, Mo and W.

REFERENCES:
patent: 4161743 (1979-07-01), Yonezawa et al.
patent: 5063421 (1991-11-01), Suzuki et al.
patent: 5200805 (1993-04-01), Parsons et al.
patent: 5210430 (1993-05-01), Taniguchi et al.
Journal of the Electrochemical Society, vol. 111 (1964), pp. 805-810; L. B. Griffiths, et al., "Growth of Alpha-SiC Single Crystals from Chromium Solution".
Journal of the Electrochemical Society, vol. 112 (1965), pp. 1114-1116, M. A. Wright, "The Growth of Alpha-SiC from Various Chromium Alloys by a Travelling Solvent Method".

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