Semiconductor device

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357 7, 357 44, H01L 2912, H01L 2900, H01L 2702

Patent

active

049204009

ABSTRACT:
A semiconductor device comprising a pair of p-type regions facing each other, a pair of n-type regions facing each other, and a nearly intrinsic region connecting these regions, thereby establishing a hole current path connecting the p-type regions and an electron current path connecting the n-type regions. Each of the hole current path and the electron current path has a transfer function which is a function of structural parameters of the device and the applied biases. The electron current path and the hole current path can provide a complementary pair of outputs.

REFERENCES:
patent: 3840888 (1974-10-01), Gaenssler et al.
patent: 4182965 (1980-01-01), Pfleiderer

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