Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S774000, C257SE23145

Reexamination Certificate

active

07915733

ABSTRACT:
A semiconductor device which includes a first wiring with a via connected to the first wiring, a second wiring connected to the via and a dummy via disposed adjacent to the via at a distance of 100 nm or less and formed on the same layer as the via.

REFERENCES:
patent: 6989583 (2006-01-01), Fujii
patent: 2005/0121788 (2005-06-01), Watanabe et al.
patent: 2004-207353 (2004-07-01), None
patent: 2004-296644 (2004-10-01), None
T. Suzuki et al., “Stress migration phenomenon in narrow copper interconnects”, Journal of Applied Physics, Feb. 15, 2007, vol. 101, No. 4, 044513.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2697669

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.