Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-01-11
2011-01-11
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S532000, C257S679000, C257SE29009
Reexamination Certificate
active
07868418
ABSTRACT:
A first main electrode is provided on one surface thereof. On the other surface thereof, a second semiconductor layer of the first conduction type and a third semiconductor layer of the second conduction type are arranged alternately along the surface. A fourth semiconductor layer of the second conduction type and a fifth semiconductor layer of the first conduction type are stacked on the surfaces of the second and third semiconductor layers. The semiconductor device further comprises a control electrode formed in a trench with an insulator interposed therebetween. The trench passes through the fourth and fifth semiconductor layers and reaches the second semiconductor layer. A sixth semiconductor layer of the first conduction type is diffused from the bottom of the trench. A second main electrode is connected to the fourth and fifth semiconductor layers.
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Yoshiyuki Hattori, et al., “Design of a 200V Super Junction MOSFET with n-buffer regions and its Fabrication by Trench Filling”, Proceedings of 2004 International Symposium on Power Semiconductor Devices & ICs, Kitakyushu, May 2004, pp. 189-192.
Kabushiki Kaisha Toshiba
Mandala Victor A
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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