Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2011-01-25
2011-01-25
Roman, Angel (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S098000, C257S100000, C257SE33005, C257SE33006, C257SE33066
Reexamination Certificate
active
07875898
ABSTRACT:
The inventive method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using irradiation with laser light to partition a substrate having semiconductor layers formed thereon, with gallium contained in at least one of the substrate and the semiconductor layers, wherein the method comprises: forming grooves to be used as boundaries between individual substrates by irradiating the substrate along partitioning locations with laser light, immersing the substrate into an acid solution, and partitioning the substrate into individual substrates along the boundaries where grooves are formed. In this manner, it provides a method for manufacturing a semiconductor device in which, during the partitioning of a gallium-containing semiconductor device substrate, deposits of gallium compounds adhered during laser irradiation are removed, partitioning surfaces are formed flat and uniform, and the incidence of electrode continuity failures and resin peeling is low.
REFERENCES:
patent: 4224101 (1980-09-01), Tijburg et al.
patent: 6261856 (2001-07-01), Shinohara et al.
patent: 6531328 (2003-03-01), Chen
patent: 6613610 (2003-09-01), Iwafuchi et al.
patent: 6677173 (2004-01-01), Ota
patent: 6794272 (2004-09-01), Turner et al.
patent: 6956241 (2005-10-01), Sugawara et al.
patent: 7193358 (2007-03-01), Yamada et al.
patent: 2002/0096994 (2002-07-01), Iwafuchi et al.
patent: 2004/0026702 (2004-02-01), Yamada et al.
patent: 2004/0118825 (2004-06-01), Eliashevich et al.
patent: 2006/0153262 (2006-07-01), Barbieri et al.
patent: 2006/0231852 (2006-10-01), Kususe et al.
patent: 49-122278 (1974-11-01), None
patent: 53-031961 (1978-03-01), None
patent: 58-043515 (1983-03-01), None
patent: 11-163403 (1999-06-01), None
patent: 11-177137 (1999-07-01), None
patent: 2001-284292 (2001-10-01), None
patent: 2003-17790 (2003-01-01), None
patent: 2003-151921 (2003-05-01), None
Hamre Schumann Mueller & Larson P.C.
Panasonic Corporation
Roman Angel
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2690629