Semiconductor device

Details Semiconductor device Semiconductor device

2011-03-29

2011-03-29

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S076000, C257SE21041

Reexamination Certificate

active

07915617

ABSTRACT:
A semiconductor device comprises: a first semiconductor layer of silicon carbide of a first conductivity type; a second semiconductor layer of silicon carbide of a second conductivity type selectively provided on the first semiconductor layer; a main electrode layer of silicon carbide of the first conductivity type selectively provided on the second semiconductor layer; a gate insulating film provided on the second semiconductor layer; a gate electrode formed on the gate insulating film; and a third semiconductor layer of the first conductivity type intervening a current path which is formed between the main electrode layer and the first semiconductor layer when an ON voltage is applied to the gate electrode. The third semiconductor layer is selectively provided on the first semiconductor layer and is adjacent to the second semiconductor layer. A doping density of the third semiconductor layer is higher than a doping density of the first semiconductor layer.

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