Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material
Reexamination Certificate
2011-01-25
2011-01-25
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
C438S589000, C438S624000, C257SE21523
Reexamination Certificate
active
07875539
ABSTRACT:
In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film.
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B S Sahu, O P Agnihotri, S C Jain, R Mertens and Isamo Kato, Influence of Hydrogen on Lossess in Silicon Oxynitride Planar Optical, Semicond. Sci. and Technol. 15 (2000) L11-L14, Printed in the UK.
Asai Koyu
Kobayashi Kiyoteru
Murata Tatsunori
Sawada Mahito
Shimizu Satoshi
Kebede Brook
McDermott Will & Emery LLP
Renesas Electronics Corporation
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