Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Emitter region feature
Reexamination Certificate
2011-08-23
2011-08-23
Stark, Jarrett (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Emitter region feature
C257S168000, C257S578000, C257SE29174
Reexamination Certificate
active
08004008
ABSTRACT:
The first base electrodes and the first emitter electrodes are all formed like strips, and are alternately arranged in parallel, and the area of the second emitter electrode is expanded to be larger than that of the second base electrode. With this, the number of current paths increases in each of which a current is pulled up almost straight from the emitter region to the second emitter electrode through the first emitter electrodes, thereby preventing the current densities of the entire chip from becoming uneven.
REFERENCES:
patent: 3448344 (1969-06-01), Schuster et al.
patent: 2005/0212088 (2005-09-01), Akaki
patent: 2008/0265386 (2008-10-01), Muto et al.
patent: 2010/0052102 (2010-03-01), Takahashi
patent: 2000-40703 (2000-02-01), None
patent: 2005-285910 (2005-10-01), None
patent: 2005-285911 (2005-10-01), None
patent: 2005-285912 (2005-10-01), None
Morrison & Foerster / LLP
Sanyo Electric Co,. Ltd.
Sanyo Semiconductor Co. Ltd.
Stark Jarrett
Tynes, Jr. Lawrence
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2683472