Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Emitter region feature

Reexamination Certificate

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Details

C257S168000, C257S578000, C257SE29174

Reexamination Certificate

active

08004008

ABSTRACT:
The first base electrodes and the first emitter electrodes are all formed like strips, and are alternately arranged in parallel, and the area of the second emitter electrode is expanded to be larger than that of the second base electrode. With this, the number of current paths increases in each of which a current is pulled up almost straight from the emitter region to the second emitter electrode through the first emitter electrodes, thereby preventing the current densities of the entire chip from becoming uneven.

REFERENCES:
patent: 3448344 (1969-06-01), Schuster et al.
patent: 2005/0212088 (2005-09-01), Akaki
patent: 2008/0265386 (2008-10-01), Muto et al.
patent: 2010/0052102 (2010-03-01), Takahashi
patent: 2000-40703 (2000-02-01), None
patent: 2005-285910 (2005-10-01), None
patent: 2005-285911 (2005-10-01), None
patent: 2005-285912 (2005-10-01), None

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