Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2011-07-19
2011-07-19
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S684000, C257S738000, C257S780000
Reexamination Certificate
active
07982301
ABSTRACT:
A miniaturized semiconductor device has a package substrate, a semiconductor chip mounted on the main surface of the package substrate and having plural LNAs each for amplifying a signal, an RF VCO for converting the frequency of the signal supplied from each LNA, and an IF VCO for converting the frequency of a signal supplied from a baseband. A plurality of ball electrodes are provided on the back surface of the package substrate. The package substrate is provided with a first common GND wire for supplying a GND potential to each of the LNAs, with a second common GND wire for supplying the GND potential to the RF VCO, and with a third common GND wire for supplying the GND potential to the IF VCO. The first, second, and third common GND wires are separated from each other.
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Danno Tadatoshi
Ichinose Tsukasa
Mori Hiroshi
Nagamine Toru
Antonelli, Terry Stout & Kraus, LLP.
Renesas Electronics Corporation
Vu Hung
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