Semiconductor device

Details Semiconductor device Semiconductor device

1977-11-02

1978-12-05

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29589, 29591, B01J 1700

Patent

active

041279310

ABSTRACT:
In a method for fabricating a semiconductor device, a polycrystalline film deposited on a main surface of a substrate is subjected to selective oxidation to form polycrystalline silicon electrode wiring paths separated by silicon oxide. An impurity of a conductivity type opposite to that of the substrate is introduced through at least one of the wiring paths into the substrate. Also disclosed is a novel semiconductor device fabricated according to this process which has a reduced junction area and a shortened junction-to-electrode distance.

REFERENCES:
patent: 3481031 (1969-12-01), Klasens
patent: 3761327 (1973-09-01), Harlow
patent: 3947299 (1976-03-01), Weijland

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