Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-05-31
2011-05-31
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S066000
Reexamination Certificate
active
07952100
ABSTRACT:
An object is to provide a semiconductor device in which damages of an element such as a transistor are reduced even when physical force such as bending is externally applied to generate stress in the semiconductor device. A semiconductor device includes a semiconductor film including a channel formation region and an impurity region, which is provided over a substrate, a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween, a first interlayer insulating film provided to cover the first conductive film, a second conductive film provided over the first interlayer insulating film so as to overlap with at least part of the impurity region, a second interlayer insulating film provided over the second conductive film, and a third conductive film provided over the second interlayer insulating film so as to be electrically connected to the impurity region through an opening.
REFERENCES:
patent: 5879741 (1999-03-01), Itoh
patent: 5966193 (1999-10-01), Zhang et al.
patent: 6261634 (2001-07-01), Itoh
patent: 6542205 (2003-04-01), Ohtani et al.
patent: 6583472 (2003-06-01), Shibata et al.
patent: 6828584 (2004-12-01), Arao et al.
patent: 7045438 (2006-05-01), Yamazaki et al.
patent: 7078277 (2006-07-01), Arao et al.
patent: 7098086 (2006-08-01), Shibata et al.
patent: 7253038 (2007-08-01), Arao et al.
patent: 2003/0082889 (2003-05-01), Maruyama et al.
patent: 2005/0167674 (2005-08-01), Shibata et al.
patent: 2006/0027817 (2006-02-01), Yamazaki et al.
patent: 2003-204049 (2003-07-01), None
patent: 2006-232449 (2006-09-01), None
Arasawa Ryo
Miyazaki Aya
Monoe Shigeharu
Yamazaki Shunpei
Costellia Jeffrey L.
Menz Douglas M
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2665446