Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular power supply distribution means

Reexamination Certificate

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Details

C257S027000, C257S565000, C257S544000

Reexamination Certificate

active

07994542

ABSTRACT:
A semiconductor device of the present invention comprises a logic circuit to which a power supply voltage, a sub-power supply voltage, a ground voltage and a sub-ground voltage are supplied; a driver for generating the sub-power supply voltage and the sub-ground voltage based on the power supply voltage and the ground voltage; a first wiring layer including a sub-power supply line for supplying the sub-power supply voltage and a sub-ground line for supplying the sub-ground voltage; a second wiring layer including source/drain lines for MOS transistors; a third wiring layer including a main power supply line for supplying the power supply voltage and a main ground line for supplying the ground voltage and arranged opposite to the first wiring layer to sandwich the second wiring layer; via structures for connecting the source/drain lines of the second wiring layer to the other layers.

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Japanese Office Action dated Apr. 22, 2008.
Japanese Office Action dated Dec. 4, 2008 with English-Language Translation.
Japanese Office Action dated Mar. 24, 2009 with English-Language Translation.

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