Semiconductor device

Details Semiconductor device Semiconductor device

1989-10-11

1992-03-03

Laroche, Eugene R.

357 59, H01L 2348

Patent

active

050937111

ABSTRACT:
A semiconductor device used as an electrically programmable read-only memory. The resistance of the device is irreversibly varied from a high value to a low value by applying an electric field. The device is composed of a silicon semiconductor substrate of a first conductivity type, a diffused layer of a second conductivity type opposite to the first conductivity type, an interlayer insulating film formed on the diffused layer, an amorphous silicon layer containing impurity of the first conductivity type, and a metal film forming conductive interconnections. The diffused layer acts as a lower electrode. The metal film serves as an upper electrode. The amorphous silicon layer and the metal film are stacked on the diffused layer.

REFERENCES:
patent: 3881242 (1975-06-01), Nutall
patent: 4302763 (1981-11-01), Ohuchi et al.
patent: 4424579 (1984-01-01), Roesner
patent: 4431460 (1984-02-01), Barson et al.
patent: 4442507 (1984-04-01), Roesner
patent: 4583106 (1986-04-01), Anantha et al.
patent: 4590589 (1986-05-01), Gerzberg
patent: 4598386 (1986-07-01), Roesner et al.
patent: 4823181 (1989-04-01), Mohsen et al.
patent: 4881113 (1989-11-01), Momodomi
Yosi Shacham-Diamon et al., A Novel Ion-Implanted Amorphous Silicon Programmable Element, IEDM 87, pp. 194-197.
Esmat Handy et al., Dielectric Based Antifuse for Logic and Memory ICs. IEDM 88, pp. 786-789.

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