Semiconductor device

Details Semiconductor device Semiconductor device

2011-08-30

2011-08-30

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S758000, C257SE23145

Reexamination Certificate

active

08008782

ABSTRACT:
A semiconductor device including a first wire made of a material mainly composed of Cu, two second wires made of a material mainly composed of Cu, an interlayer dielectric film formed between the first wire and the two second wires, two vias made of a material mainly composed of Cu and each penetrating through the interlayer dielectric film and connecting the first wire and a respective one of the two second wires, and a dummy via formed between the two second wires. The dummy via is made of a material mainly composed of Cu, has a diameter smaller than a diameter of each of the two vias, and is connected to the first wire while not contributing to electrical connection between the first wire and the two second wires.

REFERENCES:
patent: 6489684 (2002-12-01), Chen et al.
patent: 7301236 (2007-11-01), Greco et al.
patent: 7459787 (2008-12-01), Young
patent: 7547584 (2009-06-01), Chen et al.
patent: 7767570 (2010-08-01), Chen et al.
patent: 2004/0113238 (2004-06-01), Hasunuma et al.
patent: 2005/0255650 (2005-11-01), Hasunuma et al.
patent: 2007/0108618 (2007-05-01), Hasunuma et al.
patent: 2004-119969 (2004-04-01), None

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