Semiconductor device

Details Semiconductor device Semiconductor device

2011-01-04

2011-01-04

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S471000

Reexamination Certificate

active

07863656

ABSTRACT:
A unipolar semiconductor device having a drift layer (3) doped according to a first conductivity type forming a conducting path and regions (7, 8) doped according to a second conductivity type and arranged next to the drift layer, has the drift layer and the regions of a semiconductor material having an ionization energy Ei of dopants of the second conductivity type therein exceeding 0.5 eV and/or a solubility of the dopants of the second conductivity type therein being less than 1018cm−3.

REFERENCES:
patent: 5382809 (1995-01-01), Nishibayashi et al.
patent: 6313482 (2001-11-01), Baliga
patent: 6870189 (2005-03-01), Harada et al.
patent: 06-209014 (1994-07-01), None
patent: 06-209015 (1994-07-01), None
patent: 02/099869 (2002-12-01), None

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