Semiconductor device

Details Semiconductor device Semiconductor device

2011-04-19

2011-04-19

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S284000, C257S471000, C257S281000, C257S282000, C257S283000, C257SE31066, C257SE31074, C257SE27068, C257SE29041, C257SE29148, C257SE21186, C257SE21374, C257SE21450, C257SE21458

Reexamination Certificate

active

07928480

ABSTRACT:
A semiconductor device has a semiconductor layer, and a first electrode (Schottky electrode or MIS electrode) and a second electrode (ohmic electrode) which are formed on the semiconductor layer apart from each other. The first electrode has a cross section in the shape of a polygon. A second electrode-side corner of the polygon has an interior angle of which an outward extension line of a bisector crosses the semiconductor layer or the second electrode. The interior angle of such a second electrode-side corner is larger than 90°.

REFERENCES:
patent: 5548144 (1996-08-01), Kohno
patent: 5698888 (1997-12-01), Fukaishi
patent: 7183592 (2007-02-01), Hwang
patent: 2002/0079525 (2002-06-01), Mayazumi
patent: 2004/0164374 (2004-08-01), Ishikura
patent: 2004/0211976 (2004-10-01), Twynam
patent: 10-335637 (1998-12-01), None
patent: 2002-198443 (2002-07-01), None
patent: 2004-253620 (2004-09-01), None

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