Semiconductor device

Details Semiconductor device Semiconductor device

2011-07-12

2011-07-12

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S760000

Reexamination Certificate

active

07977792

ABSTRACT:
A semiconductor device including a first insulating layer having a hydroxyl radical formed over a semiconductor substrate; a line layer having a plurality of line patterns formed over the first insulating layer, the plurality if line patterns being arranged such that a spatial gap is provided therebetween; a fluorine-doped second insulating layer formed in the spatial gap between respective line patterns; and a multilayered diffusion prevention layer including a first oxide layer for suppressing an increase of a dielectric constant between the plurality of line patterns and a second oxide layer for preventing the diffusion of fluorine from the fluorine-doped second insulating layer into the first insulating layer.

REFERENCES:
patent: 5943585 (1999-08-01), May et al.
patent: 6472336 (2002-10-01), Pangrle et al.
patent: 6919638 (2005-07-01), Huang et al.
patent: 2003/0020168 (2003-01-01), Watanabe et al.
patent: 2003/0203652 (2003-10-01), Bao et al.
patent: 1400659 (2003-03-01), None
patent: 1 282 163 (2003-05-01), None
patent: 2006-278493 (2006-10-01), None

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