Semiconductor device

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device

Reexamination Certificate

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Details

C327S108000, C327S309000, C327S379000, C327S018000, C327S077000, C323S364000, C361S090000, C361S091200, C330S251000, C330S297000, C381S094500

Reexamination Certificate

active

07924084

ABSTRACT:
A switching transistor has its drain and source respectively connected to a gate and a source of an output transistor for supplying output current to a load, and its gate connected to an internal grounding wire GW to be connected to a grounding terminal GND. A resistance element R1connects the gate to the source of the switching transistor. When a voltage not smaller than a predetermined value is generated across the resistance element R1at turn-on, due to a parasitic capacitance existing between a power supply terminal. Vcc and the internal grounding wire GW, the switching transistor can be turned on to turn off the output transistor.

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patent: 2004/0263132 (2004-12-01), Fukami
patent: 2007/0121358 (2007-05-01), Hirota et al.
patent: 2008/0067598 (2008-03-01), Chiang et al.
patent: 3-166816 (1991-07-01), None
patent: 5-6966 (1993-01-01), None

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