Semiconductor device

Details Semiconductor device Semiconductor device

2011-07-05

2011-07-05

Salce, Patrick (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

C361S091100, C361S091500, C361S091600

Reexamination Certificate

active

07974056

ABSTRACT:
A semiconductor device which can achieve high breakdown voltage and high ESD tolerance of a current drive output terminal at the same time, and can quicken the response speed of a current flowing through the current drive output terminal. The inventive semiconductor device is provided, between the current drive output terminal and a first transistor or a low breakdown voltage element, with a second transistor having a breakdown voltage higher than that of the first transistor or that of the low breakdown voltage element. Furthermore, the inventive semiconductor device is provided with a diode having an anode connected with a path between the first transistor or the low breakdown voltage element and the second transistor, and a cathode connected with an ESD protection circuit.

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patent: WO 2008/050779 (2008-05-01), None

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