Semiconductor device

Details Semiconductor device Semiconductor device

2011-05-17

2011-05-17

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

C267S251000, C267S251000, C267S251000

Reexamination Certificate

active

07944052

ABSTRACT:
A semiconductor device includes a semiconductor chip, an electrode pad provided in the semiconductor chip, in which the electrode pad includes Al as a major constituent and further includes Cu, a coupling member coupled to the electrode pad, in which the coupling member primarily includes Cu, a plurality of layers of Cu and Al alloys formed between the electrode pad and the coupling member, and an encapsulating resin that includes a halogen of less than or equal to 1000 ppm, in which the encapsulating resin encapsulates the semiconductor chip, the electrode pad, and the coupling member. The plurality of layers of Cu and Al alloys includes a CuAl2layer formed on the electrode pad, a CuAl layer formed on the CuAl2layer, and a layer including one of Cu9Al4and Cu3Al2formed on the CuAl layer.

REFERENCES:
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patent: 6350667 (2002-02-01), Chen et al.
patent: 2002/0099160 (2002-07-01), Shiping
patent: 2003/0141596 (2003-07-01), Nakamura et al.
patent: 2006/0170114 (2006-08-01), Su et al.
patent: 2006/0186553 (2006-08-01), Ohta et al.
patent: 2009/0152729 (2009-06-01), Ohta et al.
patent: 1825580 (2006-08-01), None
patent: 64-37044 (1989-02-01), None
patent: 1-187832 (1989-07-01), None
Chinese Office Action dated Jun. 26, 2009 (with English translation).

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