Semiconductor device

Details Semiconductor device Semiconductor device

2011-03-08

2011-03-08

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S192000, C257SE29104, C257SE29255

Reexamination Certificate

active

07902555

ABSTRACT:
A hetero semiconductor corner region, which is a current-concentration relief region that keeps a reverse bias current from concentrating on the convex corner, is arranged in a hetero semiconductor region. Thereby, a current concentration on the convex corner can be prevented. As a result, an interrupting performance can be improved at the time of interruption, and at the same time, the generation of the hot spot where in a specific portion is prevented at the time of conduction to suppress deterioration in a specific portion, thereby ensuring a long-term reliability. Further, when the semiconductor chip is used in an L load circuit or the like, for example, at the time of conduction or during a transient response time to the interrupted state, in an index such as a short resistant load amount and an avalanche resistant amount, which are indexes of a breakdown tolerance when overcurrent or overvoltage occurs, the current concentration on a specific portion can be prevented, and thus, these breakdown tolerances can also be improved.

REFERENCES:
patent: 2007/0252172 (2007-11-01), Hayashi et al.
patent: 2007/0252173 (2007-11-01), Hayashi et al.
patent: 1519419 (A2) (2005-03-01), None
patent: 7-106558 (A) (1995-04-01), None
patent: 2003-318398 (2003-11-01), None
patent: 10-2007-0106439 (A) (2007-11-01), None

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