Semiconductor device

Details Semiconductor device Semiconductor device

2011-05-10

2011-05-10

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Floating gate

C365S185260, C365S185180, C365S185290, C257S316000

Reexamination Certificate

active

07940561

ABSTRACT:
p-type wells are provided within an n-type embedded well of a semiconductor substrate lying in an area for forming a flash memory, in a state of being isolated from one another. A capacitance section, a data write/erase charge injection/discharge section and a data read MIS•FET are disposed in each of the p-type wells. The capacitance section is disposed between the data write/erase charge injection/discharge section and the data read MIS•FET. In the data write/erase charge injection/discharge section, writing and erasing of data by an FN tunnel current at a channel entire surface are performed.

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