Semiconductor device

Details Semiconductor device Semiconductor device

2011-05-03

2011-05-03

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

C257S737000, C257S756000, C257S758000, C257SE23151

Reexamination Certificate

active

07936064

ABSTRACT:
A semiconductor device, including: a semiconductor layer having an active region; a first conductive layer formed above the semiconductor layer and having a first width; a second conductive layer connected to the first conductive layer and having a second width smaller than the first width; an interlayer dielectric formed above the semiconductor layer; an electrode pad formed above the interlayer dielectric and covering the active region when viewed from a top side; and a forbidden region provided in the semiconductor layer in a specific range positioned outward from a line extending vertically downward from an edge of at least part of the electrode pad. A connection section at which the first conductive layer and the second conductive layer are connected is not provided in the forbidden region.

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