Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Patent
1998-04-16
2000-05-16
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
107124, H01L 2974, H01L 31111
Patent
active
060640804
ABSTRACT:
A direct-current power supply unit is provided for applying forward bias to a pn junction between an n emitter region and a p base region. A switch is provided between the direct-current power supply unit and a first metal electrode layer or a second metal electrode layer. A switch control circuit is connected to the switch. A gate control circuit is connected to the switch control circuit. Accordingly, ON voltage of an IGBT can be reduced while latch-up is avoided.
REFERENCES:
patent: 3333182 (1967-07-01), Biet et al.
patent: 3440438 (1969-04-01), Bull
patent: 4794441 (1988-12-01), Sugawara et al.
patent: 5369291 (1994-11-01), Swanson
"600V Trench IGBT in Comparison with Planar IGBT: An Evaluation of the Limit of IGBT Performance", M. Harada et al., Proceedings of the 6th International Symposium on Power Semiconductor Devices & ICs, pp. 411-416.
"A 4500V Injection Enhanced Insulated Gate Bipolar Transistor (IEGT) Operating in a Mode Similar to a Thyristor", M. Kitagawa et al., International Electron Devices meeting 1993, pp. 679-682.
Meier Stephen D.
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-260688