Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1974-10-16
1977-01-04
James, Andrew T.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
357 72, 357 73, 29577, 204 15, H01L 2934, H01L 2328, H01L 2330, C25D 502
Patent
active
040018717
ABSTRACT:
An integrated circuit device with multi-level interconnection wiring structure built upon the substrate wherein each level is formed of conductor and insulator portions and wherein each level has a surface substantially parallel to the surface of the substrate.
REFERENCES:
patent: 3169892 (1965-02-01), Lemelson
patent: 3320484 (1967-05-01), Riley et al.
patent: 3351825 (1967-11-01), Vidas
patent: 3634203 (1972-01-01), Richardson
James Andrew T.
Nippon Electric Company Ltd.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-260336