Semiconductor device

Details Semiconductor device Semiconductor device

1988-01-25

1989-09-05

Hille, Rolf

357 63, 357 236, H01L 29167, H01L 29207, H01L 2978

Patent

active

048643823

ABSTRACT:
A MOS memory is formed in a semiconductor bulk, whereas a barrier semiconductor layer is disposed at the boundary between a MOS memory portion and the semiconductor bulk in order to reduce the effect of undesirable carriers excited by .alpha.-particles. The barrier semiconductor layer is designed to permit operation of the memory at low temperature while reducing the incidence of soft errors due to .alpha.-particles.

REFERENCES:
patent: 4424526 (1984-01-01), Dennard et al.
patent: 4649408 (1987-03-01), Sekine et al.
Brack et al. "Prevention of Alpha-Particle Induced Fails in Dynamic Memories" IBM Technical Disclosure Bulletin, vol. 22, No. 9, Feb. 1980, p. 4106.

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