Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1988-01-22
1991-02-12
Hille, Rolf
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307570, 357 2313, 357 43, H01L 2974, H01L 2978
Patent
active
049928449
ABSTRACT:
A first short-circuiting MOS FET with a break-through preventing function is connected between the gate and the cathode of a high sensitivity thyristor. A second MOS FET is connected between the gate and the source of the first MOS FET. A gate signal turns on the second MOS FET to reduce the gate voltage of the first MOS FET below threshold voltage. In turn, the short-circuit of the gate to the cathode of the thyristor is removed. Specifically, the gate signal is applied to the gate of the thyristor to trigger it. When forward voltage VAK applied between the anode terminal and the cathode terminal of the thyristor element is larger than the threshold voltage of the first MOS FET, the gate of the first MOS FET is biased to a voltage above the threshold voltage so that the first MOS FET is turned on. Therefore, the gate and the cathode of the thyristor element are short-circuited to prevent the break-through of the thyristor due to the an external transient surge voltage. When gate voltage VGK is input between the gate terminal and the cathode terminal of the thyristor element, the second MOS FET is turned on, so that the gate voltage of the first MOS FET is below the threshold voltage. In turn, the first MOS FET is turned off to remove the short-circuit of the gate and the cathode of the thyristor element, so that the thyristor element is turned on. The gate current is supplied to the gate of the thyristor element to turn on the thyristor element.
REFERENCES:
patent: 3999212 (1976-12-01), Usuda
patent: 4041332 (1977-08-01), Otthinata et al.
patent: 4063115 (1977-12-01), Okuhara et al.
patent: 4224634 (1980-09-01), Suedberg
patent: 4295058 (1981-10-01), Lade et al.
patent: 4471245 (1984-09-01), Janutka
patent: 4500801 (1985-02-01), Janutka
patent: 4509068 (1985-04-01), Stoisiek
patent: 4529998 (1985-07-01), Lade et al.
Yakushiji, "Patent Abstracts of Japan", Aug. 29, 1985, vol. 9, No. 212 (E-339) [1935].
Brown Peter T.
Hille Rolf
Kabushiki Kaisha Toshiba
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-24000