Semiconductor device

Details Semiconductor device Semiconductor device

1998-12-17

2001-03-13

Hardy, David (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

C257S082000

Reexamination Certificate

active

06201263

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a semiconductor device. Specifically, the present invention relates to a pad pattern of a vertical diffusion metal oxide semiconductor field effect transistor (hereinafter referred to as VDMOS) used in photo-couplers.
2. Description of the Related Art
In a VDMOS, current flows from a drain on a rear surface of a semiconductor chip to an outside surface. A source pad and a gate pad are provided on the main surface. The source pad and gate pad are arranged in the center of the chip so as to be symmetrical, thereby taking into account uniformity of current flow and voltage.
A photo coupler (hereinafter referred to as a bidirectional MOS relay) comprises such a VDMOS, a photoelectromotive element (light receiving element), and an LED.
SUMMARY OF THE INVENTION
The object of the present invention is to bring about package thinning by reducing the length of wiring connecting a VDMOS and a light receiving element, and to provide a high quality semiconductor device.
In order to achieve the above objects, a semiconductor device of the present invention comprises a first terminal, a first light emitting element arranged on the first terminal, a second terminal, a second light receiving element arranged on the second terminal opposite the light emitting element, a third terminal, a fourth terminal, a first MOS transistor element and a second MOS transistor element, each having two source pads respectively arranged in the vicinity of two mutually opposite corners, and a gate pad arranged in the vicinity of a corner in between the two opposite corners, the first MOS transistor element being arranged on the third terminal and the second MOS transistor element being arranged on the fourth terminal, a plurality of wires respectively connecting the gate pads of the first and second MOS transistors to the light receiving elements, a wire connecting one of the source pads of the first MOS transistor element close to the second terminal to the second terminal, a wire connecting one of the source pads of the second MOS transistor element close to the second terminal and the second terminal, and a wire connecting the second light receiving element and the second terminal.
In order to solve the above described problems, various other aspects are included in the present invention, and will be described with reference to preferred embodiments.


REFERENCES:
patent: 5304819 (1994-04-01), Torazawa et al.
patent: 5554881 (1996-09-01), Koyasu
patent: 5647034 (1997-07-01), Matsuda et al.
patent: 5856687 (1999-01-01), Kimura
patent: 6025610 (2000-02-01), Kusaka et al.
patent: 0700 101A1 (1996-03-01), None
Abstract-“Optically Coupled Type Field Effect Transistor Switch”, K. Mizuuchi; Pub. Aug. 22, 1989, No. 01208015, Applicant Oki Electric Industry Co., Ltd, Japan.
Abstract-“Semiconductor Relay”, Fukumori Minoru; Pub. Nov. 16, 1993, No. 05304312, Applicant Matsushita Electric Works Ltd., Japan.
“Advances in semiconductor Relays Squeeze Mechanical Versions from Market”, Technology Closeup; 2209 JEE Journal of Electronic Engineering, 31 (1994) Jul. No. 331, Tokyo, JP; pp. 68-71.

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