Semiconductor device

Details Semiconductor device Semiconductor device

1976-08-05

1977-11-08

Edlow, Martin H.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 30, 357 54, 357 8, 250211J, H01L 2978

Patent

active

040578194

ABSTRACT:
The invention relates to a photo-sensitive solid-state electronic device whose anode-cathode current is modified by photon induced changes in the electrical condition of a dielectric layer on the semiconductor body. The invention is primarily concerned with the nature of the photosensitive material used for the device which is chosen to cause charge injection into the dielectric layer. The semiconductor body may define a FET, an MIS or a CCD device and the photosensitive material is conveniently an optically active organic dyestuff.

REFERENCES:
patent: 3492549 (1970-01-01), Janning
patent: 3519999 (1970-07-01), Gregor
patent: 3543032 (1970-11-01), Kazan
patent: 3789216 (1974-01-01), Komp
patent: 3825807 (1974-07-01), Wolf
Kaufman, I.B.M. Tech. Discl. Bull., vol. 19, No. 1, June 1976, pp. 367-368.

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