Semiconductor device

Details Semiconductor device Semiconductor device

1992-09-23

1994-09-20

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Beam leads

257666, 257672, 257673, 257741, 257750, 257751, 257762, 257781, H01L 2348, H01L 2944, H01L 2952, H01L 2960

Patent

active

053492382

ABSTRACT:
Disclosed is a semiconductor device comprising a lead frame which includes a metal layer forming an outer lead, a thin metal layer forming an inner lead, an intermediate layer held between the thick metal layer and the thin metal layer for forming a connection portion between the outer lead and the inner lead and a bump positioned at the extreme end of the lead frame, whereby making the lead frame as an electrode leading means by directly connecting the bump to each electrode of a semiconductor element, wherein the lead formed of the thick metal layer has a thickness of 30 to 300 .mu.m, the lead formed of the thin metal layer has a thickness of 10 to 50 .mu.m, and the bump has thickness of 5 to 50 .mu.m.

REFERENCES:
patent: 4661837 (1987-04-01), Sono
patent: 4701363 (1987-10-01), Barber
patent: 4736236 (1988-04-01), Butt
patent: 4806503 (1989-02-01), Yoshida et al.
patent: 4935803 (1990-06-01), Kalfus et al.
patent: 5014111 (1991-05-01), Tsuda et al.
patent: 5086335 (1992-02-01), Leibovitz et al.
patent: 5109270 (1992-04-01), Nambu et al.

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