Semiconductor device

Details Semiconductor device Semiconductor device

1987-03-16

1989-08-22

James, Andrew J.

357 71, 357 59, H01L 2554, H01L 2172, H01L 2176

Patent

active

048600865

ABSTRACT:
A semiconductor device is constructed so that an insulation film is provided in regions other than a protruding portion of a substrate. A polycrystalline silicon layer and a metal silicide layer are formed over said insulation film to provide a multi-layer structure, and a take-out portion for at least one of the emitter, base, and collector members of a bipolar transistor provided in the mesa region is constituted by a film of this multi-layer structure. By virtue of the use of metal silicide together with the polycrystalline silicon, a very low resistance is achieved which enhances the device's operating speed. Further, the metal silicide is separated from the protruding portion of the substrate by a portion of the polycrystalline silicon to provide a smooth interface with the substrate. This smooth interface significantly reduces crystal defects in the single crystal substrate.

REFERENCES:
patent: 4338622 (1982-07-01), Feth et al.
patent: 4392150 (1983-07-01), Courreges
patent: 4554572 (1985-11-01), Chatterjee
Tang et al, "A Symmetrical Bipolar Structure"; IEEE, 1980, CH1616, pp. 58-60.

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