Semiconductor device

Details Semiconductor device Semiconductor device

1980-11-26

1983-02-01

Stellar, George G.

Static information storage and retrieval

Floating gate

Particular biasing

365210, 365222, G11C 1140

Patent

active

043719562

ABSTRACT:
A junction leakage current compensating circuit for a semiconductor memory device of a charge-storage type in which information can be erased by strong ultraviolet light is disclosed. The device comprises at least one dummy bit line connected to dummy cells incorporated with main memory cells and at least one compensating circuit for detecting the potential of the dummy bit line. The compensating circuit supplies compensating currents to bit lines connected to the main memory cells, responsive to the change of the potential of the dummy bit line.

REFERENCES:
patent: 3579204 (1971-05-01), Lincoln
patent: 3938108 (1976-02-01), Salsbury et al.
patent: 4063224 (1977-12-01), Kirschner
patent: 4087704 (1978-05-01), Mehta et al.
patent: 4090258 (1978-05-01), Cricchi
patent: 4094008 (1978-06-01), Lockwood et al.
patent: 4103189 (1978-07-01), Perlegos et al.
patent: 4138737 (1979-02-01), McCann
patent: 4200918 (1980-04-01), Glock et al.
patent: 4223394 (1980-09-01), Pathak et al.
IBM Technical Disclosure Bulletin, vol. 17, No. 6, Nov. 1974, pp. 1811-1813, P. J. Krick Dual-Level Sense Scheme for Composite Insulator Memory Arrays.

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