Semiconductor device

Details Semiconductor device Semiconductor device

1991-03-19

1993-01-05

Gonzalez, Frank

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257380, H01L 2952

Patent

active

051775921

ABSTRACT:
A semiconductor includes a conductor layer formed on one side thereof toward a first surface of a substrate, and a first interlayer insulation layer on the conductor layer. The first interlayer insulation layer has a first opening extending therethrough to the conductor layer. A first wiring layer is provided on the first interlayer insulation layer, and connected to the conductor layer via the first opening. A second interlayer insulation layer is formed on the first wiring layer and has a second opening extending through the first opening to the first wiring layer. A second wiring layer is formed on the second interlayer insulation layer and extends through the second interlayer to the first wiring layer and/or the conductor layer via the first opening and the second opening.

REFERENCES:
patent: 5047825 (1991-09-01), Yasaka et al.
patent: 5059555 (1991-10-01), Iranmanesh et al.
patent: 5068711 (1991-11-01), Mise
patent: 5072282 (1991-12-01), Takagi et al.
patent: 5073813 (1991-12-01), Morita et al.
patent: 5075762 (1991-12-01), Kondo et al.
patent: 5079617 (1992-01-01), Yoneda
patent: 5084404 (1992-01-01), Sharpe-Geisler
patent: 5091768 (1992-02-01), Yamazaki

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