Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With non-planar semiconductor surface
Patent
1992-06-22
1994-06-28
Sikes, William L.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With non-planar semiconductor surface
257588, 257587, 257497, H01L 27082, H01L 27102, H01L 2900
Patent
active
053249836
ABSTRACT:
A first region of a first conductivity type is formed in the surface of a semiconductor body, and second and third regions of a second conductivity type are formed on and under, respectively, of the first region. An electrode region formed on a first insulating film formed on the semiconductor body is connected electrically to the first region. The electrode region is defined as having an elongated first part an upper surface of which is connected to an electrode, and having a second, different part which has a substantially constant width and which width is substantially equal to the thickness of the first portion of the electrode region. A metal silicide film is formed over the upper surface of the first portion of the electrode region. The first, second and third regions can be base, emitter and collector regions, respectively, of a bipolar transistor formed in an island region of an epitaxially grown layer on a semiconductor substrate.
REFERENCES:
patent: 4531282 (1985-07-01), Sakai et al.
patent: 4789885 (1988-12-01), Brighton et al.
patent: 4933737 (1990-06-01), Nakamura et al.
patent: 4949162 (1990-08-01), Tamaki et al.
patent: 4963957 (1990-10-01), Ohi et al.
An Advanced High Performance Trench-Isolated Self-Aligned Bipolar Technology; Tak. H. Ning et al, Jan. 16, 1987 IEEE Tran on Elec Dev vol. Ed-34, No. 11, Nov. 1987.
Nakamura Tohru
Ohnishi Kazuhiro
Onai Takahiro
Saitoh Masayoshi
Shiba Takeo
Abraham Fetsum
Hitachi , Ltd.
Sikes William L.
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