Semiconductor device

Details Semiconductor device Semiconductor device

1993-08-03

1996-10-22

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257192, H01L 310328, H01L 310336, H01L 31072

Patent

active

055679617

ABSTRACT:
A semiconductor device may include a double hetero junction bipolar transistor and a field-effect transistor. The base of the bipolar transistor and the gate of the field-effect transistor are connected to each other to serve as an input terminal and the collector of the bipolar transistor and the drain of the field-effect transistor are connected to each other to serve as an output terminal. The bipolar transistor and the field-effect transistor may be created on a common substrate. In this case, both the bipolar and field-effect transistors can have the same multilayer/film structures.

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patent: 4821090 (1989-04-01), Yokoyama
patent: 5250826 (1993-10-01), Yokoyama
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IEEE Transactions on Electron Devices, vol. 38, No. 2, Feb. 1991, Patrick D. Rabinzohn et al.; pp. 222-231: The New Two-Dimensional Electron Gas Base HBT (2DEG-HBT): Two-Dimensional Numerical Simulation.
IEEE 1983, GaAs IC Symposium, M. Abe et al.: HEMT LSI Technology for High Speed Computers, pp. 158.varies.161.
IEEE 1987, Shuichi Fujita et al., pp. 1889-1896: Characterization of Heterostructure Complementary MISFET Circuits Employing the New Gate Current Model.
IEEE 1985, N. C. Cirillo, Jr. et al.: pp. 317-320: Complementary Heterostructure Insulated Gate Field Effect Transistors (HIGFETs).
Transactions of the Institute of Electronics, Information and Communication Engineers, C, vol. J70-C, No. 5, pp. 716-723; Toshiyuki Usagawa et al.: Device Analysis of Two Dimensional Electron Gas (2DEG)FET.

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