Semiconductor device

Details Semiconductor device Semiconductor device

1998-03-02

2000-04-18

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With contact or metallization configuration to reduce...

257500, 257501, 257510, 257506, 257508, H01L 2900

Patent

active

060518685

ABSTRACT:
A semiconductor device composed of analog circuits operated by multiple power supplies is provided with a structure which enables to reduce cross talk sufficiently. In the present semiconductor device, first and second transistors formed on the p-type silicon substrate are surrounded by third and fourth high concentration n-type buried layers extending beyond two trenches provided so as to separately surround the first and second transistors. An n-type layer is formed on these high concentration n-type layers, and first and second electrodes are formed on the n-type layer. Electric potentials of the third and fourth high concentration n-type layers are stabilized at a fixed value by the supply of power through the electrodes mounted on the these layers in order to prevent cross talk.

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patent: 5485029 (1996-01-01), Crabbe et al.
patent: 5536961 (1996-07-01), Nakagawa et al.
patent: 5644157 (1997-07-01), Iida

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