Semiconductor device

Details Semiconductor device Semiconductor device

1996-12-05

1998-01-06

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

In integrated structure

257471, H01L 27095, H01L 2947, H01L 29812, H01L 3107

Patent

active

057058474

ABSTRACT:
A semiconductor device includes a semiconductor substrate on which are successively disposed, a semiconductor laminated layer structure including at least two semiconductor layers, a first semiconductor layer containing a first dopant impurity providing a first conductivity type, and a second semiconductor layer containing the first dopant impurity in a concentration higher than in the first semiconductor layer. A semiconductor diode includes a first electrode in ohmic contact with the second semiconductor layer, and a second electrode in Schottky contact with the second semiconductor layers. A transistor includes a gate electrode in the recess and making a Schottky contact with the first semiconductor layer, and a source electrode and a drain electrode disposed on opposite sides of the recess on the second semiconductor layer, and in ohmic contact with the second semiconductor layer. The region in the diode where the depletion layer extends is broadened, and the capacitance of the diode varies linearly and is controllable over a wide range.

REFERENCES:
patent: 5109256 (1992-04-01), De Long
patent: 5202649 (1993-04-01), Kashiwa
Remshardt et al, "Surface controlled semiconductor . . . " IBM Tech Discl, vol. 14 No. 9 Feb. 92, p. 2592.

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