Semiconductor device

Details Semiconductor device Semiconductor device

1991-01-29

1993-07-13

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257 64, 257577, 257627, H01L 2904, H01L 2972

Patent

active

052276600

ABSTRACT:
This invention relates to a semiconductor device, in which a singlecrystal semiconductor substrate whose principal surface is a (111) plane is etched from the principal surface thereof in the direction perpendicular thereto to form a vertical trench and a lateral trench is formed at the bottom portion of the side wall of the vertical trench by effecting an anisotropic etching with respect to crystallographical axes so that the etching proceeds in the direction of <110> axis, the lateral and the vertical trenches being filled with polycrystalline or amorphous semiconductor or insulator.

REFERENCES:
1984 IEEE International Solid-State Circuits Conference Digest of Technical Papers, pp. 282-283, by Itoh et al.
Ki Kuchi et al. "A High-Speed Bipolar LSI Process Using Self-Aligned Double Diffusion Polysilicon Technology".
Ghandlai, VLSI Fabrication Principle, 1983, pp. 488-489 357*60.

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