Semiconductor device

Details Semiconductor device Semiconductor device

1985-04-10

1986-01-21

James, Andrew J.

357 22, 357 67, 357 71, H01L 2554, H01L 2948

Patent

active

045660212

ABSTRACT:
A Schottky gate electrode of a refractory metal silicide is formed on a compound semiconductor, by which the barrier height is maintained satisfactorily even after heat treatment above 800.degree. C. Accordingly, it is possible to form an impurity diffused region using the Schottky gate electrode as a mask and then to effect the recrystallization of the semiconductor or the activation of the impurity by heat treatment, so that source and drain regions can be positioned by self-alignment relative to the gate electrode.

REFERENCES:
patent: 3582324 (1971-06-01), Kunert et al.
patent: 4263605 (1981-04-01), Christou et al.
patent: 4321612 (1982-04-01), Murata et al.
DeWitt, D., "Field Effect Transistor" IBM Technical Disclosure Bulletin, vol. 9, No. 1, p. 102 (Jun., 1966).
Murarka, S. P., "Refractory Silicides for Integrated Circuits" J. Vac. Sci. Technol., 17 (4), Jul., Aug. 1980 pp. 775-792.

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