Semiconductor device

Details Semiconductor device Semiconductor device

1988-03-03

1990-06-19

Wojciechowicz, Edward J.

357 6, 357 231, 357 59, H01L 2348

Patent

active

049358049

ABSTRACT:
A semiconductor device with an electrode wiring layer including an upper conductive layer and, interspaced with a barrier layer used for reaction prevention, a lower conductive layer contacting an active region. The barrier layer consists of an insulating film having a thickness thin enough for flow of a tunnel current.

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Applied Physics Letters, vol. 32, No. 5, 1st Mar. 1978, New York, USA; T. Ito "Thermally Grown Silicon Nitride Films for High-Performance MNS Devices", pp. 330-331.

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