Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Ballistic transport device
Patent
1997-05-22
1999-04-20
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Ballistic transport device
257194, H01L 2906, H01L 310328, H01L 310336, H01L 31072
Patent
active
058959319
ABSTRACT:
A barrier layer (AlAs) is formed on a source layer (n-GaAs), and a drain layer (n-GaAs) and a gate layer (p-GaAs) adjacent to the drain layer are formed on the barrier layer. If the drain layer is biased to a plus voltage with the source layer, then a tunneling current will flow by way of the barrier layer. By applying a voltage to the gate layer so that the p-n junction is biased in the reverse direction, the potential on the gate side of the channel rises and the tunneling current decreases. Also, the channel width decreases due to the spread of the depletion layer to the channel side, and consequently, the current of the drain layer decreases. Thus, based on the voltage applied to the gate layer, the drain current can be controlled.
REFERENCES:
patent: 4721983 (1988-01-01), Frazier
patent: 5414274 (1995-05-01), Goronkin et al.
Proc. IRE 48, 1960, p. 359.
Physical Review Letter .multidot.6, 1961, p. 341.
Proc. IEEE 61, 1973, p. 1053.
Appl. Plys. Lett. 64, Feb. 28, 1994, p. 1138.
Japanese Journal of Applied Physics, vol. 24, No. 10, Oct. 1985, pp. L835-L837.
Honda Giken Kogyo Kabushiki Kaisha
Meier Stephen D.
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