Semiconductor device

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357 59, 357 63, 357 34, H01L 29161

Patent

active

043027636

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a first region of first conductivity type in the substrate, a second region of second conductivity type in the substrate and adjacent to the first region, a third region of the first conductivity type adjacent to the second region having at least a portion on the substrate which is comprised of the same element as the substrate and oxygen, the band gap energy of the portion being larger than that of the second region and means for transporting majority carriers in the first region to the third region.

REFERENCES:
patent: 4001762 (1977-01-01), Aoki
patent: 4062034 (1977-12-01), Matsushita
patent: 4114254 (1978-09-01), Aoki
patent: 4161744 (1979-07-01), Blaske
patent: 4176372 (1979-11-01), Matsushita
patent: 4188707 (1980-02-01), Asano et al.
patent: 4190466 (1980-02-01), Bhattacharyya
patent: 4197632 (1980-04-01), Aomura

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