Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-04-05
1996-02-06
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257139, 257328, 257140, H01L 2974, H01L 31111, H01L 2976, H01L 2994
Patent
active
054897890
ABSTRACT:
A P type source region is formed in a grid mesh-like pattern in one major surface portion of an N.sup.- type semiconductor substrate. A P type base region and P.sup.- type base region are each formed in the one major surface portion of the N.sup.- type semiconductor substrate at an area between those grid mesh-like portions of the P type source region. An N type emitter region is formed in the P type base region. An N type emitter region is formed in the P.sup.- type base region. A gate electrode is formed over the P type source region, N.sup.- type semiconductor substrate, P type base region and P.sup.- type base region. The gate electrode is formed in a grid mesh-like pattern as viewed from above the N.sup.- type semiconductor substrate. A cathode electrode is contacted with the P type source region, P.sup.- type base region and N type emitter regions. A P.sup.+ type emitter layer is formed on an other major surface side of the N.sup.- type semiconductor substrate. An N.sup.+ type buffer layer is formed between the N.sup.- type semiconductor substrate and the P.sup.+ type emitter layer. An anode electrode is contacted with the P.sup.+ type emitter layer. A cell acts as a switch at a turn-on time and a resultant MCT is rapidly turned on. Those cells .alpha. and .beta. have such an arrangement as to improve the turn-off characteristic.
REFERENCES:
patent: 4779123 (1988-10-01), Bencuya et al.
patent: 5095343 (1992-03-01), Klodzinski et al.
patent: 5155569 (1992-10-01), Terashima
ISPSD'91, The Base Resistance Controlled Thyristor (BRT), 1991, Apr. 22-24, pp. 138-141, M. Nandakumar, et al.
Patent Abstracts of Japan, vol. 16, No. 332 (E-1236), JP-A-4 099 384, Mar. 31, 1992.
Nakanishi Hidetoshi
Usui Yasunori
Kabushiki Kaisha Toshiba
Meier Stephen D.
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