Semiconductor device

Details Semiconductor device Semiconductor device

1975-10-01

1977-09-06

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307206, 307216, 307217, 357 15, 357 19, 357 30, 357 55, H01L 2726, H01L 4700

Patent

active

040471993

ABSTRACT:
The invention disclosed relates to a bulk semiconductor device having a semiconductor element exhibiting a negative conductivity under a high electric field and being capable of generating a high electric field domain therein. The semiconductor device includes two ohmic electrodes disposed at opposite ends to apply a bias voltage, at least one means for generating a high electric field domain in the semiconductor device by means applying an input signal to the generating means, at least one means for inhibiting generation of a high electric field domain by means applying another input signal to the inhibiting means, and means for detecting the existence of the high electric field domain in the semiconductor device to produce an output signal.

REFERENCES:
patent: 3439236 (1969-04-01), Blicher
patent: 3538400 (1970-11-01), Yanai et al.
patent: 3544914 (1970-12-01), Suga
patent: 3599000 (1971-08-01), Yanai et al.
patent: 3651423 (1972-03-01), Sewell
Chang, IBM Tech. Discl. Bull., vol. 12, No. 1, June 1969, pp. 6-8.

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