Semiconductor device

Details Semiconductor device Semiconductor device

1979-08-28

1982-06-29

Edlow, Martin H.

357 13, 357 37, H01L 2980

Patent

active

043374743

ABSTRACT:
An n collector is sandwiched between an n.sup.+ collector a p base including an n.sup.+ emitter and includes a p.sup.+ gate connected to the base. Another n.sup.+ collector is disposed in the n.sup.- collector at the junction between the n.sup.- and n.sup.+ collector to oppose to the emitter and shaped to be parallel to a shape of a spread edge of a depletion layer from the gate. Alternatively an n collector may be substituted for the p base and include the p base from which the p.sup.+ gate extends through the n collector into the n.sup.- collector.

REFERENCES:
patent: 3408544 (1968-10-01), Teszner
patent: 3891479 (1975-06-01), Zwernemann
patent: 4115793 (1979-09-01), Nishizawa

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