Semiconductor device

Details Semiconductor device Semiconductor device

1997-10-16

1999-11-02

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 18, 257 22, 257628, H01L 310312, H01L 2906, H01L 2904

Patent

active

059775645

ABSTRACT:
A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type formed on the surface of the first semiconductor layer, the energy difference between the bottom of the conductive band and the vacuum level in the second semiconductor layer being smaller than that in the first semiconductor layer, a gate electrode formed above the second semiconductor layer with a gate insulating film interposed therebetween, and a pair of third semiconductor layers of the second conductivity type, being in contact with at least the first semiconductor layer and faced each other in a region of the surface of the first semiconductor layer, so that a channel region is formed under the gate electrode.

REFERENCES:
patent: 5436468 (1995-07-01), Nakata et al.
James E. Chung, et al. "The Effects of Low-Angle Off-Axis Substrate Orientation on MOSFET Performance and Reliability", IEEE Transactions on Electron Devices, vol. 38, No. 3, Mar. 1991, pp. 627-633.

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