Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Patent
1995-11-28
1997-05-06
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
257347, 257350, 257351, 257500, H01L 2900, H01L 2701, H01L 2712, H01L 310392
Patent
active
056273991
ABSTRACT:
A semiconductor device of the type having a semiconductor substrate; a semiconductor layer disposed on the semiconductor substrate; a first element formed in a region of the semiconductor layer and having a perimeter including a bottom; a second element formed in another region of the semiconductor layer; an insulating layer surrounding the perimeter of the first element, for electrically insulating and separating the first element from the second element and the semiconductor substrate; an electrical shield layer disposed between the insulating layer and the first element, surrounding the perimeter of the first element, and adapted to a reference electric potential applied thereto, for shielding the first element from an electrical fluctuation of the semiconductor substrate caused by the second element; and an electrode for applying the reference electric potential to the electrical shield layer.
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Loke Steven H.
Nippondenso Co. Ltd.
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